陈少平课题组
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一、部分代表性论文

1. Decheng An, Jiangjing Wang, Jie Zhang, Xin Zhai, Zepeng Kang, Wenhao Fan, Jian Yan, Yequn Liu, Lu Lu, Chun-Lin Jia, Matthias Wuttig, Oana Cojocaru-Mire’din, Shaoping Chen, Wenxian Wang, G. Jeffrey Snyder , Yuan Yu. Retarding Ostwald ripening through Gibbs adsorption and interfacial complexions leads to high-performance SnTe thermoelectric. Energy & Environmental Science. ID: EE-ART-06-2021-001977 IF=33.85

2. Jingyun GuoWenhao Fan Yaning WangYachao WangJie ChenYu JiangShaopingChen. Study on improving comprehensive property of Te-based thermoelectric joint. Journal of Alloys and Compounds. (2021886(15):161242

3. Yabo Xu, Zemei Liu, Xiaozhen Wei, Jinmeng,Wu, Jingyun Guo, Bo Zhao, Hua Wang, Shaoping Chen, Yinke Dou. Morphological modulation to improve thermoelectric performances of PEDOT:PSS films by DMSO vapor post-treatment. Synthetic Metals. (2021)271: 116628

4. 王雅宁,陈少平*樊文浩,郭敬云, 吴玉程,王文先. PbTe 基热电接头界面性能. 物理学报. 2020,69:24:246801

5. 徐礼彬,李蓉,樊文浩,陈少平*,陈彦佐,安德成. 界面势垒和掺杂对碲热电性能的影响. 功能材料. 202009:9006-9011

6. Shaoping Chen*, Yanzuo Chen, Saneyuki Ohno, Libin Xu, Wenhao Fan, Lin Xue, Marhoun Ferhat, and Yucheng Wu. Enhancing Interfacial Properties of Mg2Si-based Thermoelectric Joint with Mg2SiNi3 Compound as Electrodes. Phys. Status Solidi A (2020) 55:8642–8650

7. Qiang Zhang, Jichong Hou, Jianfeng Fan, Shaoping Chen, Wenhao Fan, el. Charge compensation weakening ionized impurity scattering and assessing the minority carrier contribution to Seebeck coefficient in Pb-doped Mg3Sb2 compounds. Phys. Chem. Chem. Phys., 2020,22, 7012-7020

8. 郭敬云 陈少平*   樊文浩 王雅宁 吴玉程. 改善Te基热电材料与复合电极界面性能. 物理学报.2020,69(14):179-188

9. Decheng An, Shaoping Chen*,Xin Zhai, Yuan Yu, Wenhao Fan,

10. Tingting Zhang,Yequn Liu, Yucheng Wu, Wenxian Wang*, and G. Jeffrey Snyder *. High-Performance p-Type Elemental Te Thermoelectric Materials Enabled by Synergy of Carrier Tuning and Phonon Engineering. J. Mater. Chem. A, 2020, DOI: 10-1039/D0TA04830E.20208:12156-12168

11. Qiang Zhang; Jichong Hou, Jianfeng Fan, Shaoping Chen, Wenhao Fan, Hua Zhang, Wenxian Wang, Yucheng Wu, Bingshe Xu. Charge compensation weakening ionized impurity scattering and assessing the minority carrier contribution to the Seebeck coefficient in Pb-doped Mg3Sb2 compounds. Physical Chemistry Chemical Physics. 22(13):7012-7020

12. Shaoping Chen*, Libin Xu, Rong Li , Wenhao Fan, Yanzuo Chen, Decheng An, Wenxian Wang, Yucheng Wu. Synergetic effect of interface barrier and doping on the thermoelectric transport properties of tellurium. J.Materials Science. 55(20):8642-8650

13. Qiang Zhang, Jianfeng Fan, Wenhao Fan, , Hua Zhang, Shaoping Chen, Yucheng Wu, Xinfeng Tang, Bingshe Xu . Energy-Efficient Synthesis and Superior Thermoelectric Performance of Sb-doped Mg2Si0-3Sn0-7 Solid Solutions by Rapid Thermal Explosion. Materials Research Bulletin. 128:110885

14. An D, Chen S, Lu Z, et al. Low Thermal Conductivity and Optimized Thermoelectric Properties of p-Type Te–Sb2Se3: Synergistic Effect of Doping and Defect Engineering[J]. ACS applied materials & interfaces, 2019, 11(31): 27788-27797.

15. 李蓉, 陈少平, 樊文浩, . 孤对电子对碲热电传输性能的影响[J]. 材料导报, 2018, 32(21): 3726-3730.

16. Lv F, Zhang Q, Fan W, et al. Isotropic Mg3Sb2 compound prepared by solid-state reaction and ball milling combined with spark plasma sintering[J]. Journal of materials science, 2018, 53(11): 8039-8048.

17. Yang X, Chen S, Zhang H, et al. Thermoelectric Properties and Transport Mechanism of Pure and Bi‐Doped SiNWs‐Mg2Si[J]. physica status solidi (a), 2018, 215(5): 1700742.

18. Fan W, Chen S, Zeng B, et al. Enhancing the zT Value of Bi-Doped Mg2Si0.6Sn0.4 Materials through Reduction of Bipolar Thermal Conductivity[J]. ACS applied materials & interfaces, 2017, 9(34): 28635-28641.

19. Lu Y, Chen S, Wu W, et al. Enhanced thermoelectric performance of a chalcopyrite compound CuIn3Se5−Tex (x= 0~ 0.5) through crystal structure engineering[J]. Scientific reports, 2017, 7: 40224.

20. Yang R, Chen S, Fan W, et al. Interfacial properties of Cu/Ni/Mg2Si joints prepared in one step by the spark plasma sintering method[J]. Journal of Alloys and Compounds, 2017, 704: 545-551.

21. 龙洋, 陈少平, 张华, . Mg2Si 热电材料与 Cu/Ni 复合电极的接头界面及性能[J]. 稀有金属材料与工程, 2017, 46(12): 3983-3988.

22. Gao X, Chen S, Dong F, et al. Diffusion bonding of Ti/Ni under the influence of an electric current: mechanism and bond structure[J]. Journal of Materials Science, 2017, 52(6): 3535-3544.

23. Cheng M, Chen S, Du Z, et al. Improvement in thermoelectric performance of In6Se7 by substitution of Sn for In[J]. physica status solidi (a), 2016, 213(8): 2176-2182.

24. 张华, 陈少平, 龙洋, . 微波低温制备 Mg2Si0.4Sn0.6-yBiy 热电材料的传输机理[J]. 物理学报, 2015, 64(24): 247302-247302.

25. 杜子良, 陈少平, 王彦坤, . 硅纳米线复合 Mg2Si 基热电材料的制备与性能研究[J]. 稀有金属材料与工程, 2016, 45(10): 2717-2722.

26. Zhuang L, Lei Y, Chen S, et al. Microstructure and mechanical properties of AlMgB14–TiB2 associated with metals prepared by the field-assisted diffusion bonding sintering process[J]. Applied Surface Science, 2015, 328: 125-132.

27. Hou X, Chen S, Du Z, et al. Improvement of the thermoelectric performance of InSe-based alloys doped with Sn[J]. RSC Advances, 2015, 5(124): 102856-102862.

28. 张霞, 陈少平, 樊文浩, . 自分散 SiNWs 粉体的制备及形貌表征[J]. 功能材料, 2015, 46(19): 19126-19130.

29. 董凤, 陈少平, 樊文浩, . 电场激活 Ti/Ni 扩散偶连接界面相变规律与力学性能的研究[J]. 稀有金属材料与工程, 2015, 44(2).

30. 董凤, 陈少平, 胡利方, . 电场作用下 AZ31B/Cu 扩散界面的结构及性能[J]. 材料工程, 2015, 43(2): 35-40.

31. 焦媛媛, 樊文浩, 陈少平, . 管式反应法制备 Mg2Sn 基热电材料及其性能研究[J]. 稀有金属材料与工程, 2015, 44(2).

32. Chen S, Zhang X, Fan W, et al. One-step low temperature reactive consolidation of high purity nanocrystalline Mg2Si[J]. Journal of Alloys and Compounds, 2015, 625: 251-257.

33. 任伟, 孟庆森, 陈少平, . 三元缺陷化合物 CuGa3Te5 的热电性能[J]. 稀有金属材料与工程, 2014, 43(12): 3129-3132.

34. Fan W H, Jiao Y Y, Chen R X, et al. Thermoelectric transport properties and structure of Mg2 Si0.8 Sn0.2 prepared by ECAS under different current intensities[J]. Rare Metals, 2014, 33(2): 215-218.

35. Chen S, Ren W, Meng Q, et al. Thermoelectric properties of Cu2Ga4Te7 based compounds with Zn substitution for Cu and Ga[J]. physica status solidi (a), 2014, 211(3): 618-624.

36. Yang J, Chen S, Du Z, et al. Lattice defects and thermoelectric properties: the case of p-type CuInTe 2 chalcopyrite on introduction of zinc[J]. Dalton Transactions, 2014, 43(40): 15228-15236.

37. 孙政, 陈少平, 杨江锋, . 非等电子 Sb 替换 Cu Te 后黄铜矿结构半导体 Cu3 Ga5 Te9 的热电性能[J]. 物理学报, 2014, 63(5): 57201-057201.

38. Chen S P, Dong F, Fan W H, et al. Interface kinetics of combustion–diffusion bonding of Ni3 Al/Ni and TiAl/Ti under direct current field[J]. Journal of Materials Science, 2013, 48(3): 1268-1274.

39. 陈少平, 董凤, 孟庆森, . 梯度金属陶瓷 (TiC)pNi Ti 燃烧扩散连接界面组织及力学性能[D]. , 2013.

40. Liu W, Miao Y, Meng Q, et al. Structural characterization of AlMgB14 prepared by field-activated, pressure-assisted synthesis[J]. Journal of Materials Science & Technology, 2013, 29(1): 77-81.

41. Hu L, Chen S, Xue P, et al. Wear behavior of (TiB 2–TiC)–Ni/TiAl/Ti gradient materials prepared by the FAPAS process[J]. Tribology Letters, 2013, 49(2): 313-322.

42. Chen S, Meng Q, Zhang N, et al. In situ synthesis and bonding of TiTiAlTiC/Ni functionally graded materials by field-activated pressure-assisted synthesis process[J]. Materials Science and Engineering: A, 2012, 538: 103-109.

43. Yi T, Chen S, Li S, et al. Synthesis and characterization of Mg2Si/Si nanocomposites prepared from MgH2 and silicon, and their thermoelectric properties[J]. Journal of Materials Chemistry, 2012, 22(47): 24805-24813.

44. Hu L, Meng Q, Chen S, et al. Effect of Zn content on the chemical conversion treatments of AZ91D magnesium alloy[J]. Applied surface science, 2012, 259: 816-823.

45. Hu L, Chen S, Miao Y, et al. Die-casting effect on surface characteristics of thin-walled AZ91D magnesium components[J]. Applied surface science, 2012, 261: 851-856.

46. 梁连杰, 陈少平, 刘泽锋, . 电场辅助原位合成 TiB 2-TiC-Ni/TiAl/Ti 功能梯度材料及界面结构[J]. 复合材料学报, 2011, 28(5): 139-144.

47. Liu Z F, Meng Q S, Chen S P, et al. Analysis of Mechanical Properties of TiB2-TiC+ Ni/TiAl/Ti Graded Materials Prepared by FAPAS[C]//Materials Science Forum. Trans Tech Publications Ltd, 2011, 689: 33-38.

48. Xue P, Meng Q, Chen S, et al. Tribological property of (TiC-TiB 2)p Ni ceramics prepared by field-activated and pressure-assisted synthesis[J]. Rare Metals, 2011, 30(1): 599-603.

49. Hu L F, Liang L J, Chen S P, et al. The Interface Investigation and Tribological Mechanism of TiB2-TiC-Ni/TiAl/Ti Functionally Gradient Materials Prepared by FAPAS Process[C]//Materials Science Forum. Trans Tech Publications Ltd, 2011, 686: 745-751.

50. Rauscher J F, Cox C A, Yi T, et al. Synthesis, structure, magnetism, and high temperature thermoelectric properties of Ge doped Yb14MnSb11[J]. Dalton transactions, 2010, 39(4): 1055-1062.

51. 张楠, 陈少平, 梁连杰, . 电场激活原位合成 (TiC)pNi/TiAl/Ti 功能梯度材料[D]. , 2011.

52. Hu L F, Liang L J, Chen S P, et al. The Interface Investigation and Tribological Mechanism of TiB2-TiC-Ni/TiAl/Ti Functionally Gradient Materials Prepared by FAPAS Process[C]//Materials Science Forum. Trans Tech Publications Ltd, 2011, 686: 745-751.

53. Chen S, Meng Q, Zhang N, et al. Graded materials of (TiB2)p Ni with nickel substrate prepared by field-activated pressure-assisted synthesis process[J]. Journal of Wuhan University of Technology-Mater. Sci. Ed., 2010, 25(1): 39-43.

54. Meng Q S, Zhang N, Chen S P. Synthesis of (TiC)pNi/TiAl/Ti Graded Material via Field-Activated and Pressure-Assisted Combustion Process[C]//Advanced Materials Research. Trans Tech Publications Ltd, 2010, 97: 1586-1589.

55. 陈少平, 张楠, 薛鹏飞, . 钛基梯度功能材料电场激活原位合成[D]. , 2010.

56. 陈少平, 刘泽峰, 张楠, . FAPAS 制备以微晶 Ni3Al 为中间层的金属基功能梯度材料[J]. 中國有色金屬學報, 2010, 20(6): 1214-1219.

57. Chen S P, Meng Q S, Zhao J F, et al. Synthesis and characterization of TiB2–Ni–Ni3Al–CrNi alloy graded material by field-activated combustion[J]. Journal of alloys and compounds, 2009, 476(1-2): 889-893.

58. Chen S P, Meng Q S, Liu W, et al. Titanium diboride–nickel graded materials prepared by field-activated, pressure-assisted synthesis process[J]. Journal of materials science, 2009, 44(4): 1121-1126.

59. Meng Q S, Chen S P, Wang Q L, et al. (TiB2) pNi/Ni3Al/Metals Graded Materials Prepared by the Field-Activated and Pressure-Assisted Combustion Process[C]//Advanced Materials Research. Trans Tech Publications Ltd, 2009, 66: 194-197.

60. 孟庆森, 陈少平, 刘奋军, . AZ31B/Al 电场固相扩散界面结构及性能分析[D]. , 2009.

61. 张楠, 陈少平, 梁连杰, . 电场激活原位合成 (TiC)pNi/TiAl/Ti 功能梯度材料[D]. , 2011.

62. 孟庆森, 辛立军, 陈少平. 电场激活燃烧合成 (TiB2) P Ni/Ni3 Al/Ni 功能梯度材料[J]. 复合材料学报, 2009, 26(01): 80-85.

63. 刘奋军, 杜正良, 陈少平, . 电场对 AZ31B/A1 扩散结合界面结构及力学性能的影响[J]. 兵器材料科學與工程, 2009, 32(5): 18-22.

64. 张楠, 孟庆森, 陈少平, . 电场激活压力辅助法原位合成 TiC-TiB2-Ni/TiAl/Ti 功能梯度材料[J]. 功能材料, 2010, 41(09): 0-0.

65. 辛立军, 孟庆森, 陈少平. 功能材料的燃烧连接新技术[C]//第六届中国功能材料及其应用学术会议论文集 (9). 2007.

66. Meng Q S, Wang L Q, Li B S, et al. Thermoelectric properties of Y-doped Mg2Si prepared by field-activated and pressure-assisted reactive sintering[C]//Advanced Materials Research. Trans Tech Publications Ltd, 2009, 79: 1639-1642.

67. 孟庆森, 陈超, 李柏松, . 电场激活压力辅助反应合成法制备 β-FeSi_2 及其热电性能分析[J]. 2009 中国功能材料科技与产业高层论坛论文集, 2009.

68. Meng Q S, Chen S P, Shen Y L, et al. Microstructure and mechanical properties of graded materials prepared by field-activated and pressure-assisted combustion synthesis[C]//Key Engineering Materials. Trans Tech Publications Ltd, 2008, 368: 1876-1878.

69. Meng Q S, Chen S P, Zhao J F, et al. Microstructure and mechanical properties of multilayer-lined composite pipes prepared by SHS centrifugal-thermite process[J]. Materials Science and Engineering: A, 2007, 456(1-2): 332-336.

二、授权专利

1. 多层陶瓷内衬复合管及其制备方法. 专利号:ZL200610012669.8

2. 一种高强度镁合金焊丝的制备方法. 专利号:ZL200810054925

3. 高纯纳米粉体Mg2-xSiTMx热电材料的制备方法. 专利号:ZL 201210026254.1

4. 一种制备纳米Mg2-xSiREx热电材料的方法. 专利号:ZL 201110425658.3

5. 电场反应法热压法制备多孔纳米镁硅基块体热电材料的方法. 专利号:ZL 201310106901.4

6. 一种利用多晶硅副产物制备镁硅基热电材料的方法. 专利号:ZL201310126683.0

7. 机械合金化辅助固液固法制备自分散硅纳米线粉体. 专利号:ZL 201410245993.9

8. 一种热电材料Mg2Sn及其制备方法. 专利号:ZL 201310366023.X

9. 超硬材料铝镁硼-二硼化钛与金属的反应扩散连接方法. 专利号:ZL201310289756.8

10. 微波辅助MgH2固相反应法制备Mg2SixSn1-xBiy基热电材料的方法.专利号:ZL201410343346.1

11. 镁硅基硅纳米线复合热电材料的制备方法. 专利号:ZL 201410352839.1

12. 一种玻璃管与金属板的电场辅助扩散连接装置及方法. 专利号:ZL201510081087.4

13. 一种电磁场辅助玻璃板与金属板的扩散连接装置及方法. 专利号:ZL201510936856.4

三、参加会议

1. 全国材料大会,2019.7.10-7.13,中国成都

2. 36届国际热电会议,2019.6.30-7.3,韩国庆州

3. 第十次中国热电材料及应用学术会议,2018.5.6-5.10,中国杭州

4. 第十六届全国青年材料科学技术研讨会,2017.10.13-10.16,中国天津

5. 35届国际热电会议, 2016.5.29-5.31,中国武汉

6. ICT 2016.5.29-5.31,中国武汉

7. ICC-52014.8.17-8.21,中国北京

8. PCM Global Conference On Polymer And Composite Materials2014,中国宁波

9. AMRA(Advance Materials Research and Application)2014,中国海南

10. 2014中国材料大会(热电分会),2014,中国成都

11. 第六届中国热电材料及应用学术会议,2014,中国南昌

12. ICT 2013 International Conference of Thermoelectrics2013,日本大阪

13. IUMRS-ICAM2013(热电分会),2013,中国青岛

14. 中国材料大会(热电分会),2012,中国太原

15. MRS2011,美国旧金山

16. ICT2011,美国密歇根州



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